Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications-Reference-Cited by-同舟云学术

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Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

Published:2010-03 Issue:9 Volume:96 Page:093506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

You Hee-Wook,Cho Won-Ju

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3337103

Reference13 articles.

1. Design considerations in scaled SONOS nonvolatile memory devices

2. Proceedings of 43rd Annual IEEE International Symposia on Reliability Physics;Houdt J. V.,2005

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