Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching-Reference-Cited by-同舟云学术

Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching

Published:2014 Issue:12 Volume:6 Page:6668-6678
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yoon Ji-Wook¹²³,Yoon Jung Ho¹⁴⁵⁶,Lee Jong-Heun¹²³⁷²,Hwang Cheol Seong¹⁴⁵⁶

Affiliation:

1. Department of Materials Science and Engineering

2. Korea University

3. Seoul 136-714, Republic of Korea

4. Inter-university Semiconductor Research Center

5. Seoul National University

6. Seoul 151-744, Korea

7. Department of Nano-Semiconductor Engineering

Abstract

Microscopic-level changes such as the dynamic evolutions in conducting filament, interfacial TiON region, and matrix phase during various steps of resistance switching were studied using AC impedance spectroscopy.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR00507D

Reference21 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Resistance switching in HfO2 metal-insulator-metal devices

3. Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

4. Resistive switching effects of HfO2 high-k dielectric

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