Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914976
Reference27 articles.
1. Statistical variability and reliability in nanoscale FinFETs
2. Drain current variability and MOSFET parameters correlations in planar FDSOI technology
3. Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs
4. Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions
5. Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
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3. Nanowire Diameter Dependency of the Variability in n/p Silicon Nanowire FETs With Ultrashort Gate Length of 15 nm;IEEE Transactions on Electron Devices;2022-12
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