Leakage mitigation in NW FET using negative Schottky junction drain and its process variation analysis
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10825-021-01813-5.pdf
Reference33 articles.
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3. Haris, M., Loan, S.A.: Si/gaas hetero junction tunnel fet: design and investigation. J. Nanoelectron. Optoelectron. 14(10), 1434–1444 (2019)
4. Sajjad, R.N., Chern, W., Hoyt, J.L., Antoniadis, D.A.: Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs. IEEE Trans. Electron Devices 63(11), 4380–4387 (2016)
5. Ehteshamuddin, M., Alharbi, A.G., Loan, S.A.: Impact of interface traps on the BTBT-current in tunnel field effect transistors. In: 2018 5th International Conference on Electrical and Electronic Engineering (ICEEE), pp. 224–227 (2018)
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