Investigation of interfacial roughness of InxGa1−xAs epitaxial layers on GaAs and InP substrates by soft x‐ray reflectivity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347338
Reference30 articles.
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4. The national synchrotron light source VUV and soft x-ray beam lines: Performance characteristics
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1. Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques;Journal of Crystal Growth;2000-11
2. Theory, fabrication and characterization of quantum well infrared photodetectors;Materials Science and Engineering: R: Reports;2000-07
3. Effects of PH3/H2 purge on the As concentration profile of InAsxP1−x/InP single quantum wells;Journal of Crystal Growth;2000-01
4. Quantitative analysis of the compositional profile of a single quantum well by grazing incidence x-ray reflectivity and photoluminescence;Applied Physics Letters;1999-04-12
5. Optimization of the spacer layer thickness in AlInAs/InGaAs/InP MODFETs;Journal of Electronic Materials;1996-09
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