Effects of PH3/H2 purge on the As concentration profile of InAsxP1−x/InP single quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD
2. Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy
3. OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells
4. Two-step kinetics of As/P exchange reaction
5. Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation;Physical Review B;2008-02-29
2. Experimental and theoretical investigation ofGa1−xInxAssurface reactivity to phosphorus;Physical Review B;2003-12-11
3. Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments;Applied Physics Letters;2002-08-05
4. Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces;Journal of Crystal Growth;2001-06
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