Two-step kinetics of As/P exchange reaction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369433
Reference12 articles.
1. Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy
2. In SituInterface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
3. Properties of lnAsxP1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As4 beam
4. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy
5. Theoretical investigations of As overlayers on InP(110) surfaces
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1. InP-Based Quantum Dot Lasers;Advances in Semiconductor Lasers;2012
2. Critical thickness for InAs quantum dot formation on (311)B InP substrates;Journal of Crystal Growth;2009-04
3. InAs nanowire formation on InP(001);Journal of Applied Physics;2006
4. Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy;Journal of Applied Physics;2005-07
5. Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange;Applied Physics Letters;2004-08-23
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