Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Funder
Defense Advanced Research Projects Agency
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0022550
Reference42 articles.
1. Origin of the superior conductivity of perovskite Ba(Sr)SnO3
2. High Mobility in a Stable Transparent Perovskite Oxide
3. First-principles analysis of electron transport in BaSnO3
4. Velocity saturation in La-doped BaSnO3 thin films
5. High-mobility BaSnO3 grown by oxide molecular beam epitaxy
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