High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface
Author:
Affiliation:
1. Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01048
Reference61 articles.
1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
2. Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface
3. Tunable Rashba Spin-Orbit Interaction at Oxide Interfaces
4. Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces
5. Observation of inverse Edelstein effect in Rashba-split 2DEG between SrTiO 3 and LaAlO 3 at room temperature
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ferroelectric switching and field effect of Pb(Zr0.7Ti0.3)O3 on Ba1−xLaxSnO3;Physical Review Materials;2024-08-07
2. How UV irradiation enhances electrical conductance at a grain boundary in SrTiO3;Scripta Materialia;2024-06
3. Density functional theory study on the formation mechanism and electrical properties of two-dimensional electron gas in biaxial-strained LaGaO$$_3$$/BaSnO$$_3$$ heterostructure;Scientific Reports;2024-05-04
4. Epitaxially Stacked 12‐Layer Perovskite Oxide Heterostructure as a Double‐Level Double‐Gate Field‐Effect Transistor;Advanced Functional Materials;2024-03-22
5. Micron-scale FETs of fully epitaxial perovskite oxides using chemical etching;Materials Today Quantum;2024-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3