High-mobility BaSnO3 grown by oxide molecular beam epitaxy-Reference-Cited by-同舟云学术

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High-mobility BaSnO3 grown by oxide molecular beam epitaxy

Published:2016-01 Issue:1 Volume:4 Page:016106
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Raghavan Santosh¹,Schumann Timo¹,Kim Honggyu¹,Zhang Jack Y.¹,Cain Tyler A.¹,Stemmer Susanne¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939657

Reference27 articles.

1. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

2. A heterojunction modulation-doped Mott transistor

3. Electrostatic modification of novel materials

4. High Mobility in a Stable Transparent Perovskite Oxide

5. High carrier mobility in transparent Ba1−xLaxSnO3 crystals with a wide band gap

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1. Strain and orientation modulated optoelectronic properties of La-doped SrSnO3 epitaxial films;Applied Surface Science;2024-11

2. Electric field control of the energy gap in ZnO and BaSnO3 films grown on PMN-PT;Applied Physics Letters;2024-07-01

3. First-Principles Study of Dominant Surface Terminations on BaSnO₃ (001) Surface: Implications for Precise Control of Semiconductor Thin Films;ACS Applied Nano Materials;2024-05-10

4. Density functional theory study on the formation mechanism and electrical properties of two-dimensional electron gas in biaxial-strained LaGaO$$_3$$/BaSnO$$_3$$ heterostructure;Scientific Reports;2024-05-04

5. Reconfigurable optoelectronic transistors for multimodal recognition;Nature Communications;2024-04-16

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