Dislocations induced by bubble formation in high energy He implantation in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1327289
Reference18 articles.
1. Cavity formation and impurity gettering in He-implanted Si
2. Gettering of metals by voids in silicon
3. Lifetime control in silicon devices by voids induced by He ion implantation
4. MeV implantation into semiconductors
5. Helium desorption/permeation from bubbles in silicon: A novel method of void production
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1. Structure Evolution of Nanocrystalline–Amorphous TiAl Biphase Films during Helium Ion Implantation;Coatings;2023-03-17
2. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C;Applied Surface Science;2018-10
3. Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells;Solar Energy Materials and Solar Cells;2016-01
4. Stick–slip behavior identified in helium cluster growth in the subsurface of tungsten: effects of cluster depth;Journal of Physics: Condensed Matter;2015-09-11
5. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10
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