Structure Evolution of Nanocrystalline–Amorphous TiAl Biphase Films during Helium Ion Implantation

Author:

Liu Pei12,Tian Lifeng1,Li Xuanze1ORCID,Cao Jianyu12,Ma Yutian3,Meng Xiangmin12

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Beijing 100190, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China

Abstract

Building nanocrystalline–amorphous biphase nanostructure has recently emerged as an advanced route to improve radiation tolerance, as the nanocrystalline–amorphous interface is expected to enhance the sink efficiencies of helium atoms. However, the structure evolution and degradation mechanisms during helium ion implantation in nanocrystalline–amorphous biphase films are still unclear. This study aimed to further understand these mechanisms through in situ observation of nanocrystalline–amorphous TiAl biphase films deposited via magnetron sputtering in a helium ion microscope. Results demonstrate that during the helium implantation process (the final fluence was 4 × 1017 ions cm−2), a partial swelling occurred in the implantation region without blisters, cracks, or exfoliation on the surface. The AFM and TEM results revealed that the partial bulge originated from the differential in the swelling rate between the amorphous and grain areas during helium ion implantation. These findings offer promising insights into designing radiation-tolerant materials for advanced nuclear reactors.

Funder

Scientific Instrument Developing Project of the Chinese Academy of Sciences

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

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