Lifetime control in silicon devices by voids induced by He ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362633
Reference12 articles.
1. Diffusion and lifetime engineering in silicon
2. Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices
3. A comparison of the performance of gold and platinum killed power diodes
4. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
5. Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation
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3. Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime;Journal of Vacuum Science & Technology B;2018-07
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