Cavity formation and impurity gettering in He-implanted Si-Reference-Cited by-同舟云学术

Cavity formation and impurity gettering in He-implanted Si

Published:1996-01 Issue:1 Volume:25 Page:157-164
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Follstaedt D. M.,Myers S. M.,Petersen G. A.,Medernach J. W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666190.pdf

Reference46 articles.

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2. Semiconductor Silicon 1994, eds. H.R. Huff, W. Bergholz and K. Sumino, (Pennington, NJ: Electrochemical Society Proc, 1994) PV94-10, p. 769.

3. E.R. Weber,Properties of Silicon, EMIS Data Reviews, Series No. 4 (New York: INSPEC, 1988), p. 409.

4. H.R. Huff,Proc. 4th Intl. Symp. ULSI, eds. G. Celler, E. Middlesworth and K. Hoh (Pennington, NJ: Electrochemical Society Proc, 1993), p. 103.

5. H. Wong, N.W. Cheung and P.K. Chu,Appl. Phys. Lett. 52, 889 (1988).

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