Interface recombination velocity and misfit strain in molecular‐beam epitaxy double heterostructures of GaAs/GaxIn1−xP(0.47
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328534
Reference11 articles.
1. Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C
2. Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C
3. The recombination properties of lattice‐mismatched InxGa1−xP/GaAs heterojunctions
4. Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxy
5. Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination model for heterostructure interfaces;Journal of Applied Physics;1993-11
2. Optical properties and Stokes shifts in lamp‐annealed InGaAs/GaAs strained layer superlattice;Journal of Applied Physics;1988-04-15
3. OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications;Journal of Crystal Growth;1986-09
4. Heterostructure bipolar transistors: What should we build?;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983
5. Interface recombination and carrier confinement at a GaAs/GaxIn1−xP double heterojunction studied by picosecond population modulation spectroscopy;Applied Physics Letters;1982-05-15
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