Interface recombination and carrier confinement at a GaAs/GaxIn1−xP double heterojunction studied by picosecond population modulation spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92935
Reference11 articles.
1. Surface vibrational spectroscopy using stimulated Raman scattering
2. Surface vibrational spectroscopy using stimulated Raman scattering
3. Sensitivity limitations for CW stimulated Raman spectroscopy
4. GaInP grown by molecular beam epitaxy doped with Be and Sn
5. GaInP grown by molecular beam epitaxy doped with Be and Sn
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1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
2. Characterization of the Semiconductor Electrolyte Interface of p-GaAs/GaInP2 Electrodes in Acetonitrile Solutions;The Journal of Physical Chemistry;1996-01-01
3. Comparison of surface recombination velocities in InGaP and AlGaAs mesa diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-01
4. The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy;Journal of Applied Physics;1992-05-15
5. Chapter 2 Transient Spectroscopy by Ultrashort Laser Pulse Techniques;Semiconductors and Semimetals;1992
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