The recombination properties of lattice‐mismatched InxGa1−xP/GaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323414
Reference22 articles.
1. Room‐temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μm
2. cw room‐temperature InxGa1−xAs/InyGa1−yP 1.06‐μm lasers
3. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
4. Melt removal and planar growth of In1−xGaxP1−zAszheterojunctions
5. Continuous operation of 1.0‐μm‐wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbxdouble‐heterostructure injection lasers at room temperature
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