Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth rates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343682
Reference26 articles.
1. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
2. Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP
3. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
4. Vapor phase epitaxial growth of nitrogen-doped In1−xGaxP alloys 0385 V 2
5. The preparation and properties of vapor-grown In1−xGax P
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