Incorporation of N into GaAsN under N overpressure and underpressure conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1582554
Reference16 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Electronic Properties of Ga(In)NAs Alloys
3. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
4. Bowing parameter of the band-gap energy of GaNxAs1−x
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