Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1−xNx thin films with less atomic disorder-Reference-Cited by-同舟云学术

Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1−xNx thin films with less atomic disorder

Published:2017-02 Issue: Volume:695 Page:3163-3169
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Biswas Mahitosh,Shinde Nilesh,Makkar Roshan Lal,Bhatnagar Anuj,Chakrabarti Subhananda

Funder

Department of Science and Technology, India

Riber

Sophisticated Analytical Instrument Facility

Industrial Research Consultancy Centre, IIT Bombay

University Grants Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference39 articles.

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3. Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance;Malikova;J. Electron. Mater,1998

4. Electronic structure and phase stability of GaAs1-xNx alloys;Neugebauer;Phys. Rev. B,1995

5. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybuty-larsine;Ougazzaden;Appl. Phys. Lett.,1997

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