Numerical simulation of the primary displacement damage in GaAs1−N with low nitrogen atomic content-Reference-Cited by-同舟云学术

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Numerical simulation of the primary displacement damage in GaAs1−N with low nitrogen atomic content

Published:2021-12 Issue: Volume:200 Page:110765
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Jia Tongxuan,Wang Zujun,Xue Yuanyuan,Jiao Qianli,Yang Xie,Nie Xu,Lai Shankun,Ma Wuying,He Baoping,Liu Minbo

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference30 articles.

1. Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy;Pan;Appl. Phys. Lett.,2000

2. Bowing parameter of the band-gap energy of GaNxAs1-x;Bi;Appl. Phys. Lett.,1997

3. Band parameters for nitrogen-containing semiconductors;Vurgaftman;J. Appl. Phys.,2003

4. Hydrogen-induced improvements in optical quality of GaNAs alloys;Buyanova;Appl. Phys. Lett.,2003

5. 1-eV solar cells with GaInNAs active layer;Friedman;J. Cryst. Growth,1998

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of the microstructure of 2D graphene sheets in the molecular dynamics simulation of irradiation damage cascades;International Journal of Modern Physics B;2023-06-09

2. Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation;Nanomaterials;2022-02-11

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