Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)-Reference-Cited by-同舟云学术

Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)

Published:2019-06-18 Issue:8 Volume:19 Page:4510-4520
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bolshakov Alexey D.¹^ORCID,Fedorov Vladimir V.²,Koval Olga Yu.²,Sapunov Georgiy A.²,Sobolev Maxim S.²,Pirogov Evgeniy V.²,Kirilenko Demid A.¹³,Mozharov Alexey M.²,Mukhin Ivan S.¹²

Affiliation:

1. ITMO University, Kronverkskij 49, 197101, St. Petersburg, Russia

2. St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia

3. Ioffe Institute, Politekhnicheskaya 29, 194021, St. Petersburg, Russia

Funder

Russian Science Foundation

Ministry of Education and Science of the Russian Federation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b00266

Reference75 articles.

1. Epitaxial III−V Nanowires on Silicon

2. Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications

3. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

4. Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

5. Study of GaP/Si Heterojunction Solar Cells

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