Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112604
Reference10 articles.
1. See Mater. Res. Soc. Symp. Proc.283, (1992).MRSPDH0272-9172
2. Temperature dependence of the crystallite size and crystalline fraction of microcrystalline silicon deposited from silane by plasma CVD
3. Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique
4. Deposition of phosphorus doped microcrystalline silicon below 70 °C at 70 MHz
5. Doped microcrystalline silicon growth by high frequency plasmas
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