Doped microcrystalline silicon growth by high frequency plasmas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111067
Reference7 articles.
1. Dopant‐enhanced low‐temperature epitaxial growth ofinsitudoped silicon by rapid thermal processing chemical vapor deposition
2. Microcrystalline Silicon Prepared by VHF-GD: Structure, Transport and Optical Properties
3. Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma‐enhanced chemical vapor deposition process
4. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition
5. Growth of microcrystal silicon by remote plasma chemical vapor deposition
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