Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma‐enhanced chemical vapor deposition process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351440
Reference20 articles.
1. Plasma processes under vacuum conditions
2. High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency
3. Frequency effects in silane plasmas for plasma enhanced chemical vapor deposition
4. High quality a-Si:H films and interfaces prepared by VHF plasma CVD
5. Radio frequency or microwave plasma reactors? Factors determining the optimum frequency of operation
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