Radiation damage in neutron transmutation doped silicon: Electrical property studies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325548
Reference26 articles.
1. Transmutation-Produced Germanium Semiconductors
2. Lamellar growth phenomena in 〈111〉-oriented dislocation-free float-zoned silicon single crystals
3. Breakdown behavior of rectifiers and thyristors made from striation-free silicon
4. Preparation of Uniform Resistivity n-Type Silicon by Nuclear Transmutation
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