Lamellar growth phenomena in 〈111〉-oriented dislocation-free float-zoned silicon single crystals-Reference-Cited by-同舟云学术

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Lamellar growth phenomena in 〈111〉-oriented dislocation-free float-zoned silicon single crystals

Published:1974-06-16 Issue:2 Volume:23 Page:555-565
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Mühlbauer A.,Sirtl E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD

2. Methoden zur untersuchung inhomogener dotierstoff-verteilung in silicium-einkristallen

3. A New Striation Etch for Silicon

4. A Simplification of Kämper's Striation Etch for Silicon

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2. Effects of the laser heating and air bubbles on the morphologies of c-axis LiNbO3 fibers;Journal of Crystal Growth;2001-09

3. Impurity striations in crystals;Progress in Crystal Growth and Characterization of Materials;1996-01

4. Investigations for the improvement of the radial doping homogeneity of dislocation-free floating zone silicon crystals;Crystal Research and Technology;1989-01

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