Breakdown behavior of rectifiers and thyristors made from striation-free silicon
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31724/01477734.pdf?arnumber=1477734
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5. Microwave losses of undoped n-type silicon and undoped 4H-SiC single crystals at cryogenic temperatures;Electronic Materials Letters;2014-05
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