The effect of neutron irradiation defects on electrical resistivity in FZ-silicon samples irradiated at Es-Salam research reactor
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. Preparation of Uniform Resistivity n-Type Silicon by Nuclear Transmutation
2. Computer simulation of neutron transmutation doping of isotopically engineered heterostructures
3. Radiation damage in neutron transmutation doped silicon: Electrical property studies
4. Neutron transmutation doping of isotopically engineered Ge
5. Annealing behavior comparison of NTD FZ (H) Si irradiated in light-water-reactor and heavy-water-reactor
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1. Neutron-induced damage simulations using MCNP6 and SRIM codes: Beyond neutron transmutation doping of silicon;Annals of Nuclear Energy;2023-07
2. Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons;Radiation Physics and Chemistry;2021-08
3. Complexes defects induced by neutron irradiation of Cz-silicon;Applied Physics A;2020-04-08
4. Conceptual design of irradiation device for silicon neutron transmutation doping around Es-Salam research reactor;Nuclear Science and Techniques;2020-03-18
5. Structural, topological, electrical and luminescence properties of CZ-silicon (CZ-Si) irradiated by neutrons;Applied Physics A;2018-09-22
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