Performance regeneration of InGaZnO transistors with ultra-thin channels
Author:
Affiliation:
1. School of Physics, Shandong University, Jinan 250100, China
2. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
Funder
Innovation Fund of Shandong University
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914296
Reference32 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide
4. Influence of Oxide Semiconductor Thickness on Thin-Film Transistor Characteristics
5. Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors
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