Physical Properties of an Ultrathin Al2O3/HfO2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors

Author:

Xu Yachen1,Chen Huimin1,Xu Haiyang2,Chen Minyu13,Zhou Pengchao1,Li Shuzhe1,Zhang Ge4,Shi Wei2ORCID,Yang Xuyong1ORCID,Ding Xingwei2ORCID,Wei Bin12ORCID

Affiliation:

1. Microelectronic R&D Center, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China

2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, China

3. Light, Nanomaterials, Nanotechnologies (L2n) Laboratory, CNRS ERL 7004, University of Technology of Troyes, 12 rue Marie Curie, Troyes, Cedex 10004, France

4. Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Funder

Ministry of Science and Technology of the People's Republic of China

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Anhui Sholon New Material Technology Co., Ltd.

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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