Non-volatile memory cells based on ZnxCd1−xS ferroelectric Schottky diodes-Reference-Cited by-同舟云学术

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Non-volatile memory cells based on ZnxCd1−xS ferroelectric Schottky diodes

Published:2003-06-09 Issue:23 Volume:82 Page:4089-4091
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

van der Sluis P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1581365

Reference6 articles.

1. Ferroelectric Schottky Diode

2. Calculation of band bending in ferroelectric semiconductor

3. Study of ferroelectricity and current–voltage characteristics of CdZnTe

4. Optimization of electronic-band alignments at ferroelectric (ZnxCd1−x)S/Si(100) interfaces

5. Determination of the optimal cation composition of ferroelectric (ZnxCd1−x)S thin films for applications to silicon-based nonvolatile memories

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1. Ferroelectric Schottky diodes of CuInP2S6 nanosheet;Applied Physics Letters;2023-10-02

2. SiO2-Based Conductive-Bridging Random Access Memory;Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations;2021-10-16

3. SiO2 based conductive bridging random access memory;Journal of Electroceramics;2017-03-15

4. Resistive switching properties in CdZnTe films;Applied Physics Letters;2015-02-09

5. Hardware-based artificial neural networks for size, weight, and power constrained platforms;SPIE Proceedings;2014-05-22

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