Determination of the optimal cation composition of ferroelectric (ZnxCd1−x)S thin films for applications to silicon-based nonvolatile memories
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476710
Reference8 articles.
1. Retention analysis of the memorized states of the MFIS structure for ferroelectric-gate FET memory by considering leakage current through ferroelectric and insulator layers
2. Surface Conduction on InsulatingBaTiO3Crystal Suggesting an Intrinsic Surface Electron Layer
3. Ferroelectricity in zinc cadmium telluride
4. Optimization of electronic-band alignments at ferroelectric (ZnxCd1−x)S/Si(100) interfaces
5. Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride
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