Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1315614
Reference26 articles.
1. Ferroelectric Memories
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4. Crystal and Electrical Characterizations of EpitaxialCeXZr1-XO2Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor
5. Fabrication of PbZrxTi1-xO3Films on Si Structures Using Y2O3Buffer Layers
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