Resistive switching properties in CdZnTe films
Author:
Affiliation:
1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
2. Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, China
Funder
Fundamental Research Funds for the Central Universities
the 111 Project of China
The National Basic Research Program of China
the National Instruments Program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4907973
Reference22 articles.
1. Developments in the bulk growth of Cd1−xZnxTe for substrates
2. Electron and hole drift mobility measurements on thin film CdTe solar cells
3. Cadmium zinc telluride and its use as a nuclear radiation detector material
4. Ferroelectricity in zinc cadmium telluride
5. Study of ferroelectricity and current–voltage characteristics of CdZnTe
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