Ferroelectric Schottky diodes of CuInP2S6 nanosheet

Author:

Yao Jinyuan1ORCID,Liu Yongtao2ORCID,Ding Shaoqing1ORCID,Zhu Yanglin3ORCID,Mao Zhiqiang1ORCID,Kalinin Sergei V.4ORCID,Liu Ying1ORCID

Affiliation:

1. Department of Physics and Materials Research Institute, The Pennsylvania State University 1 , University Park, Pennsylvania 16802, USA

2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory 2 , Oak Ridge, Tennessee 37831, USA

3. Nanjing Normal University 3 , Nanjing, Jiangsu 210023, China

4. Department of Materials Science and Engineering, The University of Tennessee 4 , Knoxville, Tennessee 37996, USA

Abstract

Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP2S6 (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current–voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

Funder

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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