A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4983453
Reference40 articles.
1. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
2. DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN
3. Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition
4. Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies
5. A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies
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