Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2005379
Reference28 articles.
1. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
2. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
3. Role of carbon in GaN
4. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
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