Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1643540
Reference16 articles.
1. Role of carbon in GaN
2. CCl4 doping of GaN grown by metalorganic molecular beam epitaxy
3. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
4. Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
5. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
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