Deposition‐rate reduction through improper substrate‐to‐electrode attachment in very‐high‐frequency deposition ofa‐Si:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363227
Reference8 articles.
1. Neutral radical deposition from silane discharges
2. Control of a-Si:H deposition by the ion flux in a VHF plasma
3. Influence of plasma excitation frequency fora-Si:H thin film deposition
4. Effects of low‐frequency modulation on rf discharge chemical vapor deposition
5. Plasma potentials of 13.56‐MHz rf argon glow discharges in a planar system
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3. Influence of substrate potential on a-Si:H passivation of Si foils bonded to glass;Thin Solid Films;2015-03
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