Monte Carlo calculations of static and dynamic electron transport in nitrides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2089187
Reference28 articles.
1. GaN based transistors for high power applications
2. Band parameters for nitrogen-containing semiconductors
3. Electron mobilities in gallium, indium, and aluminum nitrides
4. Electron Hall mobility of n‐GaN
5. Low field electron mobility in GaN
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