Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing-Reference-Cited by-同舟云学术

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Published:2007-11-12 Issue:20 Volume:91 Page:202105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Grace Huiqi,Toh Eng-Huat,Wang Xincai,Tripathy Sudhiranjan,Osipowicz Thomas,Chan Taw Kuei,Hoe Keat-Mun,Balakumar Subramaniam,Lo Guo-Qiang,Samudra Ganesh,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2803853

Reference10 articles.

1. Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

2. Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions

3. Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si

4. Synthesis of epitaxial SnxGe1−x alloy films by ion‐assisted molecular beam epitaxy

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing;Journal of Applied Physics;2024-08-08

2. First-principles study of electronic structure and optical and mechanical properties of SiGeSn alloy;International Journal of Modern Physics B;2022-04-18

3. Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition;Thin Solid Films;2018-05

4. Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys;Solid-State Electronics;2015-08

5. Characterization of Ge1-x-ySixSny Ternary Alloy Surfaces and Ni/Ge1-x-ySixSny Bilayer Reactions by X-Ray Techniques;MRS Proceedings;2015