Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition-Reference-Cited by-同舟云学术

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Published:2018-05 Issue: Volume:654 Page:77-84
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wang Buguo,Fang Z.-Q.,Claflin Bruce,Look David,Kouvetakis John,Yeo Yung Kee

Funder

Air Force Office of Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1-x buffer layers;Bauer;Appl. Phys. Lett.,2003

2. Si–Ge–Sn alloys: from growth to applications;Wirths;Prog. Crystal Growth Charact. Mater.,2016

3. Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices;Beeler;ECS J. Solid State Sci. Technol.,2013

4. Ternary GeSiSn alloys: new opportunities for strain and band gap engineering using group-IV semiconductors;D'Costa;Thin Solid Films,2010

5. Direct bandgap cross-over point of Ge1−ySny grown on Si estimated through temperature-dependent photoluminescence studies;Harris;J. Appl. Phys.,2016

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics;Journal of Applied Physics;2024-03-22

2. Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094);Journal of Applied Physics;2020-02-14

3. Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si;Thin Solid Films;2019-03

4. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ as Gate Dielectric;IEEE Electron Device Letters;2019-02