Interaction of ambient gas and meniscus surface during growth of edge‐defined film‐fed growth polycrystalline silicon samples
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349322
Reference29 articles.
1. Modeling of Ambient‐Meniscus Melt Interactions Associated with Carbon and Oxygen Transport in EFG of Silicon Ribbon
2. Factors Determining the Oxygen Content of Liquid Silicon at Its Melting Point
3. Passivity during the Oxidation of Silicon at Elevated Temperatures
4. Origin of SiC Impurities in Silicon Crystals Grown from the Melt in Vacuum
5. Long nonagons — An approach to high productivity silicon sheet using the EFG method
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2. Dislocation-related deep levels in carbon rich p-type polycrystalline silicon;Solar Energy Materials and Solar Cells;2007-06
3. Oxygen-related deep levels in oxygen doped EFG poly-Si;Materials Science and Engineering: B;2000-02
4. In situgettering of edge‐defined film‐fed growth silicon in a CO ambient;Journal of Applied Physics;1995-01
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