In situgettering of edge‐defined film‐fed growth silicon in a CO ambient
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359332
Reference5 articles.
1. Interaction of ambient gas and meniscus surface during growth of edge‐defined film‐fed growth polycrystalline silicon samples
2. Ambient gas-induced SiC-like structures in edge-defined film-fed grown polycrystalline silicon samples
3. Oxygen‐ and carbon‐related defects in edge‐defined film‐fed growth silicon ribbon
4. Energy Levels in Silicon
5. InsituCr gettering in polycrystalline silicon sheets obtained by edge‐defined film‐fed growth
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