Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4928195
Reference17 articles.
1. Performance limiting surface defects in SiC epitaxial p-n junction diodes
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3. Characterization of high-quality polycrystalline diamond and its high FET performance
4. Chemomechanical Polishing of Silicon Carbide
5. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials
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