Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding-Reference-Cited by-同舟云学术

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Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding

Published:2022-12-07 Issue: Volume: Page:
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Container-title:2022 IEEE 24th Electronics Packaging Technology Conference (EPTC)
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Author:

Ranjan Akhil¹,Lingaparthi Ravikiran²,Huo Lili³,Chan Casimir²,Dharmarasu Nethaji²,Radhakrishnan K.¹

Affiliation:

1. Center for Micro/Nano-electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University,Singapore,639798

2. Nanyang Technological University,Temasek laboratories@NTU,Singapore,637553

3. Nanyang Technological University,UMI3288 CINTRA, (CNRS/NTU/THALES),Singapore,637553

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10012686/10013085/10013280.pdf?arnumber=10013280

Reference13 articles.

1. Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

2. CMP Development of Gallium Nitride Material;jia;International Conference on Planarization/CMP Technology (ICPT),2015

3. Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst

4. Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride

5. Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution

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