Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride-Reference-Cited by-同舟云学术

Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride

Published:2010-04 Issue: Volume:645-648 Page:795-798
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sadakuni Shun¹,Murata Junji¹,Yagi Keita²,Sano Yasuhisa¹,Arima Kenta¹,Hattori Azusa N.¹,Okamoto Takeshi¹,Yamauchi Kazuto¹

Affiliation:

1. Osaka University

2. Ebara Research Corporation

Abstract

We have developed a novel planarization technique for gallium nitride (GaN) substrates using a photo-electro chemical process and solid acid catalyst. In this method, a GaN surface is oxidized by ultraviolet (UV) light irradiation, and the oxide layer is chemically removed by a solid acid catalyst. In the current work, the dependence of the removal rate on the UV light intensity was investigated.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.795.pdf

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