Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst-Reference-Cited by-同舟云学术

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Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst

Published:2007-05-14 Issue:20 Volume:90 Page:202106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Arima Kenta,Hara Hideyuki,Murata Junji,Ishida Takeshi,Okamoto Ryota,Yagi Keita,Sano Yasuhisa,Mimura Hidekazu,Yamauchi Kazuto

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2739084

Reference20 articles.

1. Anisotropy of high-temperature hardness in 6H silicon carbide

2. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning

3. Atomic Structure of Hexagonal SiC Surfaces

4. Chemical States of Crystalline Silicon Carbide Surfaces

5. Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces

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3. Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte;Ceramics International;2023-11

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