Effects of electrolyte type and concentration on the anodic oxidation of 4H-SiC (0001) in slurryless electrochemical mechanical polishing

Author:

Yang Xiaozhe,Yang Xu,Yamamura Kazuya

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference22 articles.

1. Silicon carbide converters and MEMS devices for high-temperature power electronics: a critical review;Guo;Micromachines,2019

2. Fundamental research on semiconductor SiC and its applications to power electronics;Matsunami;Proc. Jpn. Acad. Ser. B,2020

3. Dependence of thin-oxide films quality on surface microroughness;Ohmi;IEEE Trans. Electron Devices,1992

4. P.G. Neudeck, Electrical impact of SiC structural crystal defects on high electric field devices, NASA/TM, 1999, p. 209647.AU: Please provide complete details in Refs. [4,5,7].

5. M. Loboda, C. Parfeniuk, Flat SiC semiconductor substrate. U.S. Patent 2015, No US 9,018,639 B2.

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